Title: Study of the ion implantation of Sn-119 in a-Si1-xCx : H
Authors: Barancira, T ×
Moons, R
Koops, GEJ
Deweerd, W
Pattyn, Hugo
Tzenov, N
Tzolov, M
Dimova-Malinovska, D
Tsvetkova, T
Venegas, Rafael
Zhang, GL #
Issue Date: Mar-1999
Publisher: Elsevier science bv
Series Title: Journal of non-crystalline solids vol:244 issue:2-3 pages:189-196
Abstract: The Mossbauer spectroscopy and Rutherford backscattering spectroscopy studies presented here allow an investigation of the origins of the previously observed changes in optical absorption in sputter deposited a-Si1-xCx:H films caused by high dose Sn implantations. To this end, we investigate the microscopic surroundings and the bonding structures of the Sn atoms. At doses up to 1 x 10(17) cm(-2) a major fraction of Sn takes a quasi-substitutional site, sp(3) bonded to four Si neighbours, while a smaller fraction is present as Sn2+, presumably due to SnO formation. The latter fraction increases at the higher doses and the increase is paralleled by the formation of Sn4+ and a prominent metallic sn component. This beta-Sn fraction, presumably in the form of nanosized precipitates, becomes dominant at the higher doses, thus explaining the complete lack of optical transmission. (C) 1999 Elsevier Science B.V. All rights reserved.
ISSN: 0022-3093
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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