Title: Defect generation in Si/SiO2/ZrO2/TiN structures: the possible role of hydrogen
Authors: Houssa, Michel
Afanas'ev, Valeri
Stesmans, Andre
Heyns, MM #
Issue Date: Dec-2001
Publisher: Iop publishing ltd
Series Title: Semiconductor science and technology vol:16 issue:12 pages:L93-L96
Abstract: The time and voltage dependence of the neutral defect and positive charge generated in the SiO2/ZrO2 gate dielectric stack during constant gate voltage stress of Si/SiO2/ZrO2/TiN structures is shown to be quite well reproduced by a dispersive hydrogen transport model. The model is based on the assumption that impacting electrons release H+ ions near the Si/SiO2 interface which then randomly hop around in the gate dielectric stack, where they can be trapped and form hydrogen-induced defects. By comparing the experimental results and the model. it is found that the positive charge is located close to the Si/SiO2, interface, while the neutral defect resides in the ZrO2 layer. We suggest that these defects concern the positively charged [Si-2 = OH](+) centre and neutral ZrOH centre, respectively.
ISSN: 0268-1242
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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