IEEE Electron Device Letters vol:27 issue:2 pages:99-101
A systematic study of the modulation of the workfunction (WF) of Ni fully silicided gates by doping is presented, comparing the effects of dopants (Al, B, undoped, P, and As) on the WF for different dielectrics (SiO2 versus HfSiON) and silicide phases (NiSi, Ni2Si and Ni31Si12). Dual thickness series (HfSiON/SiO2) were used to extract accurate WF values accounting for charge effects on HfSiON. While a WF modulation in the range of similar to 0.4 V was obtained for NiSi On SiO2 comparing As, P, and B, doped and undoped devices, negligible modulation was obtained for NiSi on HfSiON (<= 50 mV) suggesting Fermi-level pinning, and for the Ni-rich silicides on SiO2 (<= 100 mV). Dopant pileup at the dielectric interface, believed to be responsible for the NiSi/SiO2 WF modulation, was, however, observed for both NiSi and Ni-rich silicides. In contrast the WF of Ni-rich silicides on SiO2 can be modulated with Al, suggesting a different mechanism of WF tuning for Al compared to B, P, and As.