Diffusion and Defect Data B, Solid State Phenomena vol:55 pages:20-25
At present Auger recombination limits the performance of the mid-In lasers. We review the theoretical and experimental work that has been done to suppress the Auger recombination. Strain mediated bandgap engineering is found to be very effective in reducing the Auger recombination rates and improving the performance of the lasers. Characteristics of strained layer laser diodes fabricated in our laboratory are described.