Journal of Crystal Growth vol:127 issue:1-4 pages:85-92
We review the technological processes that share the goal of combining dissimilar (III-V compounds and Si) semiconductor materials on a single substrate in order to achieve enhanced perfomance and functionality of devices and circuits. In particular, we address these techniques that enable monolithic solutions based on the fabrication of thin crystalline III-V films on a dissimilar substrate. This fabrication process can be completed by heteroepitaxial growth or thin-film transfer and we discuss the present state of these techniques. We find that III-V heteroepitaxy on Si is still focusing on the materials quality, which we will illustrate with some recent results, while thin-film transfer is currently tackling more processing related issues. Beside these thin-film based technologies, hybrid flip-chip is also a mature candidate for integration of optical and electronic functions.