Title: Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications
Authors: Behet, M
Nemeth, S
De Boeck, J
Borghs, Gustaaf
Tummler, J
Woitok, J
Geurts, J #
Issue Date: Apr-1998
Publisher: Iop publishing ltd
Series Title: Semiconductor Science and Technology vol:13 issue:4 pages:428-432
Abstract: InAs/Al0.2Ga0.8Sb quantum well structures of high quality were grown by molecular beam epitaxy. The structural and electrical quality was characterized by x-ray diffractometry, Raman spectroscopy and Hall transport measurements. When an optimized buffer layer was used on a GaAs substrate, electron mobilities of 28 000 cm(2) V-1 s(-1) at 300 K and 400 000 cm(2) V-1 s(-1) at 20 K were routinely achieved for undoped structures. These excellent transport properties were utilized in a sensitive magnetoresistive sensor.
ISSN: 0268-1242
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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