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Title: Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source
Authors: Nemeth, S
Boeve, H
Liu, ZY
Attenborough, K
Bender, H
Nistor, L
Borghs, Gustaaf
De Boeck, J #
Issue Date: Jul-2001
Publisher: Elsevier science bv
Series Title: Journal of Crystal Growth vol:227 pages:888-892
Abstract: Epitaxy of Fe on GaAs by the MBE technique has a long tradition in magnetism research. This paper deals with the growth of epitaxial Fe-GaN-Fe trilayer structures whose intriguing magnetic properties were exploited for the evaluation of GaN as a spin-dependent tunneling barrier. The trilayers were grown on semi-insulating (0 0 1) GaAs using an ultra-high vacuum deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma nitrogen source. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: 
ISSN: 0022-0248
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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