Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source
Nemeth, S Boeve, H Liu, ZY Attenborough, K Bender, H Nistor, L Borghs, Gustaaf De Boeck, J #
Elsevier science bv
Journal of Crystal Growth vol:227 pages:888-892
Epitaxy of Fe on GaAs by the MBE technique has a long tradition in magnetism research. This paper deals with the growth of epitaxial Fe-GaN-Fe trilayer structures whose intriguing magnetic properties were exploited for the evaluation of GaN as a spin-dependent tunneling barrier. The trilayers were grown on semi-insulating (0 0 1) GaAs using an ultra-high vacuum deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma nitrogen source. (C) 2001 Elsevier Science B.V. All rights reserved.