Title: Band alignment between (100)Si and complex rare earth/transition metal oxides
Authors: Afanas'ev, Valeri
Stesmans, Andre
Zhao, C
Caymax, M
Heeg, T
Schubert, J
Jia, Y
Schlom, DG
Lucovsky, G #
Issue Date: Dec-2004
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:85 issue:24 pages:5917-5919
Abstract: The electron energy band alignment between (100)Si and several complex transition/rare earth (RE) metal oxides (LaScO3, GdScO3, DyScO3, and LaAlO3, all in amorphous form) is determined using a combination of internal photoemission and photoconductivity measurements. The band gap width is nearly the same in all the oxides (5.6-5.7 eV) yielding the conduction and valence band offsets at the Si/oxide interface of 2.0+/-0.1 and 2.5+/-0.1 eV, respectively. However, band-tail states are observed and these are associated with Jahn-Teller relaxation of transition metal and RE cations which splits their d* states. (C) 2004 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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