Author:

Keywords:

Science & Technology, Technology, Life Sciences & Biomedicine, Nuclear Science & Technology, Radiology, Nuclear Medicine & Medical Imaging

Abstract:

A Moessbauer study of **1**2**5I implanted into silicon and germanium lattices with various dose values was performed. The spectra measured after thermal annealing suggested an off-substitutional site population for I in the silicon lattice. The Moessbauer spectra showed no difference in the hyperfine splitting of **1**2**5Te after electron capture of **1**2**5I in comparison with that obtained after the isomeric transition of implanted **1**2**5**mTe. The site populations of Te and I atoms after implantation and thermal annealings were concluded as being the same.