Title: Trap-assisted tunneling in high permittivity gate dielectric stacks
Authors: Houssa, Michel
Tuominen, M
Naili, M
Afanas'ev, Valeri
Stesmans, Andre
Haukka, S
Heyns, MM #
Issue Date: Jun-2000
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:87 issue:12 pages:8615-8620
Abstract: The electrical characteristics of SiOx/ZrO2 and SiOx/Ta2O5 gate dielectric stacks are investigated. The current-density J(G) in these dielectric stacks is shown to be strongly temperature dependent at low voltage (below about 2 V), the more so in the ZrO2 stack. On the other hand, J(G) is much less temperature dependent at higher voltage. These results are consistent with a model which takes into account the direct tunneling of electrons across the SiOx layer and the trap-assisted tunneling of electrons through traps with energy levels below the conduction band of the high permittivity dielectric layer. The energy levels and densities of these electron trapping centers are estimated by fitting this trap-assisted tunneling model to the experimental results. (C) 2000 American Institute of Physics. [S0021-8979(00)09312-9].
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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