Title: Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam
Authors: Yao, SD ×
Zhou, SQ
Jiao, SX
Meng, ZX
Lu, YH
Sun, CC
Sun, C
Vantomme, André
Langouche, Guido
Pipeleers, Bert
Zhao, Qiang #
Issue Date: Sep-2002
Publisher: Elsevier science sa
Series Title: Surface & coatings technology vol:158 pages:412-415
Abstract: The structure and crystal quality of GaN using Rutherford Backscattering Spectrometry and Channeling were studied. The samples were grown on sapphire by metal-organic vapor-phase epitaxy. The H+, He+, N+ with different ion energies and doses were implanted into GaN. Post-implantation annealing were investigated. We observed 7-8 orders increasing of resistivity by Hall measurements after specific temperature annealing, and the optimized annealing temperature is approximately 200-400 degreesC for H+, He+ and N+ respectively. Even after 600-700 degreesC annealing, the resistivity is still very high. We think vacancies and radioactive damage by implantation are responsible for resistivity changes in GaN samples. (C) 2002 Elsevier Science B.V. All rights reserved.
ISSN: 0257-8972
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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