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Title: InAs/(Al,Ga)Sb quantum well structures for magnetic sensors
Authors: Behet, M
Das, Johan
De Boeck, J
Borghs, Gustaaf #
Issue Date: Jul-1998
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on Magnetics vol:34 issue:4 pages:1300-1302
Abstract: This paper reports on the fabrication and characterization of Hall and magnetoresistive sensors with high sensitivity and good temperature stability. InAs/AlGaSb quantum well structures grown by molecular beam epitaxy (MBE) on semiinsulating GaAs substrates were used as active layers for magnetic field sensing. The excellent transport properties (electron mobilities up to 30,000 cm(2)/Vs at room temperature) resulted in high sensitivity for room temperature operation of magnetoresistors (relative sensitivity of 0.46 %/mT) and Hall elements (magnetic sensitivity of 5.5 V/T).
URI: 
ISSN: 0018-9464
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
# (joint) last author

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