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Title: Growth and structural characterization of embedded inassb on gaas-coated patterned silicon by molecular-beam epitaxy
Authors: Deboeck, J
Dobbelaere, W
Vanhellemont, J
Mertens, R
Borghs, Gustaaf #
Issue Date: Mar-1991
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:58 issue:9 pages:928-930
Abstract: The molecular beam epitaxial growth of InAsSb on GaAs-coated patterned Si substrates is reported. The epilayers are grown embedded in wells so a coplanar Si-InAsSb surface can be obtained. The InAsSb epilayer morphology is compared for different substrate conditions (Si-well, Si-mesa, GaAs) using Nomarski contrast microscopy. High-voltage electron microscopy shows that the threading defect density of the InAsSb layers is high but decreases with thickness. In the reduced area electron diffraction pattern of the GaAs-InAsSb interface, additional diffraction spots are visible due to microtwins in the InAsSb. High-resolution electron microscopy reveals a regular array of misfit dislocations relieving the 14.2% lattice mismatch in the early stage of growth. Stripping Hall measurements for InAs0.05Sb0.95 show a constant mobility as a function of depth for the top 2-mu-m of the film and the 300 and 77 K mobility values are comparable.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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