Title: Investigation of iridium as a gate electrode for deep sub-micron CMOS technology
Authors: Pawlak, MA ×
Schram, T
Maex, Karen
Vantomme, André #
Issue Date: Nov-2003
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:70 issue:2-4 pages:373-376
Abstract: The physical and electrical properties of an Ir/SiO2/Si stack were evaluated for advanced gate electrode application. The thermal stability of the stack was studied on MOS capacitors annealed at temperatures between 500 and 1000 degreesC in N-2 ambient for 30 s followed by forming gas anneal (FGA) at 420 degreesC for 20 min. The work function of iridium, found to be 4.9 eV, is stable up to 900 degreesC, making it a good candidate as PMOS electrode. In addition, no evidence was found for any chemical reaction at the interface between Ir and SiO2. (C) 2003 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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