Sensors and actuators a-physical vol:79 issue:3 pages:175-178
High-quality InAs/Al0.2Ga0.8Sb quantum well structures grown on germanium substrates by molecular beam epitaxy (MBE) showed electron mobilities of 27,500 cm(2)/Vs for a sheet concentration of n(S) = 1.8 x 10(12) cm(-2) at room temperature. These excellent transport properties resulted in sensitivities of 0.88 T-1 (voltage drive) and 370 V/A/T (current drive) for a cross-shaped Hall sensor. Our results demonstrate that the performance of the Hall sensors on germanium and GaAs substrates is comparable in terms of sensitivities and temperature stability. (C) 2000 Elsevier Science S.A. All rights reserved.