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Title: Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy
Authors: Depuydt, A
Maslova, NS
Panov, VI
Rakov, VV
Savinov, SV
Van Haesendonck, Christian #
Issue Date: Mar-1998
Publisher: Springer verlag
Series Title: Applied Physics A Materials Science And Processing vol:66 Part 1 Suppl. S pages:S171-S174
Abstract: We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe two major types of atomic-scale defects which can be identified as S dopant atoms and As vacancies, respectively. The strong bias voltage dependence of the STM image of the impurities can be explained in terms of resonant tunneling through localized states which are present near the impurity.
ISSN: 0947-8396
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
# (joint) last author

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