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Title: Identification of the ohmic-contact formation mechanism in the au/te/au/gaas system
Authors: Wuyts, K ×
Langouche, Guido
Watte, J
Vanderstraeten, Hélène
Silverans, Roger
Munder, H
Berger, Mg
Luth, H
Vanhove, M
Bender, H
Van Rossum, Marc #
Issue Date: May-1992
Publisher: American physical soc
Series Title: Physical Review B vol:45 issue:20 pages:11863-11875
Abstract: The Ohmic-contact formation mechanism in furnace alloyed Au/Te/Au/(n -type GaAs) structures is investigated by the combined application of Mossbauer spectroscopy, x-ray diffraction, Raman scattering, and Auger-electron-spectroscopy depth profiling. A dominant shallow-donor-dopant behavior of the Te atoms (substitutional on As sites) can be questioned. The observed low-resistance conductivity is related to the presence of a (n+-type Ga2Te3)/(n -type GaAs) heterojunction. Although the possibility of some residual n-type doping of the GaAs substrate remains, evidence is adduced that, in the Ohmic-contact formation mechanism, at least an equally important role is played by a degenerate As n-type doping of the Ga2Te3. Similar arguments are developed for the (Au-Ge)/(n-type GaAs) and Ge/Pd/(n-type GaAs) Ohmic-contact systems.
ISSN: 0163-1829
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Physics and Astronomy - miscellaneous
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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