State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells
Abbade, MLF Iikawa, F Brum, JA Troster, T Bernussi, AA Pereira, RG Borghs, Gustaaf #
Amer inst physics
Journal of Applied Physics vol:80 issue:3 pages:1925-1927
Photoluminescence and magneto-luminescence techniques were used to evaluate the optical properties of pseudomorphic GaAs/In0.2Ga0.8As/Al0.25Ga0.75As modulation doped single quantum wells. The data are analyzed using self-consistent calculations that predict a strong coupling between the InGaAs quantum well and the potential well formed in the AlGaAs barrier due to planar-doping. The coupling effect gives rise to additional transitions in the emission spectra. Temperature and magnetic field dependence of luminescence spectra provide strong evidence of indirect transitions in these structures. (C) 1996 American Institute of Physics.