Title: Inassb light-emitting-diodes and their applications to infrared gas sensors
Authors: Dobbelaere, W
Deboeck, J
Bruynseraede, C
Mertens, R
Borghs, Gustaaf #
Issue Date: May-1993
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:29 issue:10 pages:890-891
Abstract: InAs1-xSbx light emitting diodes were grown on GaAs and Si substrates by molecular beam epitaxy. The devices emit infra-red light with wavelengths between 3 and 5 mum and can be used to fabricate infra-red ps sensors.
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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