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Title: Characterization of S centers generated by thermal degradation in SiO2 on (100)Si
Authors: Stesmans, Andre
Nouwen, B
Pierreux, Dieter
Afanas'ev, Valeri #
Issue Date: Jun-2002
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:80 issue:25 pages:4753-4755
Abstract: The structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range T-an=950 degreesC-1250 degreesC was monitored by electron spin resonance (ESR) in terms of point defect creation, including E-gamma('), E-delta('), EX and the elusive predominant degradation-center S. Depth profiling after heating at 1200 degreesC shows that the S centers predominantly reside near the oxide borders, generally in anticorrelation with the E-gamma(') distribution. The resulting anisotropic demagnetization effect has enabled inference of the S center susceptibility. As to the nature of the S center, an observed weak hyperfine structure may comply with the S center being of the type Si(n)O(3-n)equivalent toSi. either the single n=1 or a mix of both the n=1,2 variants. (C) 2002 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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