Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:80-1 pages:176-179
The lattice location of ion implanted In into type Ila diamond and the annealing of implantation damage was studied with the emission channeling technique. Radioactive In-111 was implanted into IIa diamonds with  surface orientation at 300 K, at energies of 120 and 350 keV and at doses between 5 x 10(12) and 5 x 10(13) cm-2 . Axial channeling effects of the emitted conversion electrons were measured after annealing to different temperatures up to 1473 K. For implantation doses below 10(13) cm-2 two stages for annealing of implantation defects are observed, one between 300 and 600 K and the other above 1000 K The appearance of strong channeling effects in all major axial directions after annealing at 1473 K indicates a significant substitutional fraction of In atoms. From a comparison with calculated emission channeling profiles a substitutional fraction of up to 45% was determined. The experimental data are also consistent with a close-to-substitutional fraction of about 50-60% assuming small mean displacements of the In atoms of about 0.1 angstrom. A significant fraction of In on tetrahedral interstitial sites can be ruled out.