Title: Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation
Authors: Afanas'ev, Valeri
Stesmans, Andre
Ciobanu, F
Pensl, G
Cheong, KY
Dimitrijev, S #
Issue Date: Jan-2003
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:82 issue:4 pages:568-570
Abstract: An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O-2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation. (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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