Title: Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Authors: Houssa, Michel
Autran, JL
Stesmans, Andre
Heyns, MM #
Issue Date: Jul-2002
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:81 issue:4 pages:709-711
Abstract: The generation of interface defects and positive charge during the injection of electrons in p-Si/SiO2/ZrO2/TiN structures is investigated. The kinetics of generation of both type of defects are found to be very similar. A model is proposed to explain the interface defect generation, based on the depassivation of trivalent silicon dangling bonds (Si-3=SiH-->Si-3=Si-.) at the (100)Si/SiO2 interface by the injected electrons. A Gaussian spread for the activation energy E-d related to the dissociation of the Si-H bond is included in this model. Comparison with experimental results reveals that the mean value of the activation energy E-di decreases linearly with the electric field E-ox across the SiO2 layer. This behavior is attributed to the alignment of the Si-H dipole moment with respect to E-ox, which favors dissociation of the Si-H bond. The hint of a correlation between the interface defect and positive charge generation suggests that the positively charged centers might be hydrogen-induced overcoordinated oxygen centers. (C) 2002 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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