Title: High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Authors: Lorenz, K ×
Wahl, Ulrich
Alves, E
Nogales, E
Dalmasso, S
Martin, RW
O'Donnell, KP
Wojdak, M
Braud, A
Monteiro, T
Wojtowicz, T
Ruterana, P
Ruffenach, S
Briot, O #
Issue Date: May-2006
Publisher: Elsevier BV
Series Title: Optical Materials vol:28 issue:6-7 pages:750-758
Abstract: GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, in order to optimize the implantation parameters of fluence, implantation temperature and energy. Rutherford backscattering spectrometry in the channelling mode (RBS/C), scanning electron microscopy (SEM), transmission electron microscopy (TEM), temperature-dependent photoluminescence (PL) and room temperature cathodoluminescence (CL) were used to study structural and optical properties of the samples. Different annealing methods are compared.
ISSN: 0925-3467
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science