High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Lorenz, K × Wahl, Ulrich Alves, E Nogales, E Dalmasso, S Martin, RW O'Donnell, KP Wojdak, M Braud, A Monteiro, T Wojtowicz, T Ruterana, P Ruffenach, S Briot, O #
Optical Materials vol:28 issue:6-7 pages:750-758
GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, in order to optimize the implantation parameters of fluence, implantation temperature and energy. Rutherford backscattering spectrometry in the channelling mode (RBS/C), scanning electron microscopy (SEM), transmission electron microscopy (TEM), temperature-dependent photoluminescence (PL) and room temperature cathodoluminescence (CL) were used to study structural and optical properties of the samples. Different annealing methods are compared.