Title: Formation of epitaxial cosi2 on si(100) - role of the annealing ambient
Authors: Vantomme, AndrĂ© ×
Nicolet, Ma
Bai, G
Fraser, Db #
Issue Date: Jan-1993
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:62 issue:3 pages:243-245
Abstract: With a thin Ti layer interposed between a Si(100) substrate and a Co overlayer, the inversion of the Co and Ti films and the formation of a partly relaxed epitaxial CoSi2 layer on Si (100) can be obtained by steady-state annealing in inert as well as reactive ambients. A reactive ambient chemically binds the Ti near the surface as an oxide or nitride layer, which preserves the bilayer structure during a high temperature treatment. In a nonreactive ambient, the Ti and CoSi2 layers react further, resulting in a uniform layer of Co0.25Ti0.75Si2 and CoSi2. An eptiaxial orientation of CoSi2 is retained even in that case.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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