Title: High-speed tunneling-barrier GaAs light emitters
Authors: Van Hoof, Chris
Borghs, Gustaaf #
Issue Date: Jan-1998
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Photonics Technology Letters vol:10 issue:1 pages:24-26
Abstract: High-speed GaAs light-emitting diodes are described that contain a single-AlAs tunneling barrier for localization of the carriers, These devices are identical to double-barrier resonant tunneling light emitters in speed and efficiency, but are not dependent on resonant tunneling of charge carriers, An external quantum efficiency of 0.18% and a 3-dB modulation bandwidth of 1.3 GHz are reported. These devices are less affected by nonradiative recombination compared to the conventional heavy-doping approach, in which a high-modulation bandwidth is obtained at the expense of a more than proportional reduction in quantum efficiency.
ISSN: 1041-1135
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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