ITEM METADATA RECORD
Title: Influence of in situ applied stress during thermal oxidation of (111)Si on P-b interface defects
Authors: Stesmans, Andre
Pierreux, Dieter
Jaccodine, RJ
Lin, MT
Delph, TJ #
Issue Date: May-2003
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:82 issue:18 pages:3038-3040
Abstract: The results of a series of experiments are reported in which constant, controlled levels of in-plane stress were applied in situ to oxidizing (111) silicon substrates. Electron spin resonance measurements show that the properties of inherently incorporated electrically active P-b defects at the (111)Si/SiO2 interface are affected; among others, tensile stresses decrease the number of P(b)s, while compressive stresses have the opposite effect. The results are in agreement with the generally accepted relationship between P-b-defect generation and interfacial mismatch (stress). (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science