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Title: Back side raman measurements on ge/pd/n-gaas ohmic contact structures
Authors: Wuyts, Kathleen
Watte, J
Silverans, Roger
Vanhove, M
Borghs, Gustaaf
Palmstrom, Cj
Florez, Lt
Munder, H #
Issue Date: May-1994
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:64 issue:18 pages:2406-2408
Abstract: Back side Raman measurements were performed on Ge/Pd/n-GaAs ohmic contacts. The analysis was carried out on as-deposited and annealed Ge/Pd/60 nm GaAs structures, and complemented by measurements on isolated 60 nm GaAs slabs. Ohmic behavior is found to coincide with the presence of a confined, highly doped (approximately 1-3 X 10(19)/cm3) region in the GaAs surface layers. This result can be interpreted as giving direct experimental evidence for the importance of doping in the ohmic behavior for this contact.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Clinical Residents Medicine
Physics and Astronomy - miscellaneous
Solid State Physics and Magnetism Section
# (joint) last author

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