Title: X-ray-diffraction, rutherford backscattering and channeling measurements on pb inclusions in si
Authors: Milants, K
Hendrickx, P
Pattyn, Hugo
Issue Date: Jun-1993
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:80-1 pages:1014-1018
Abstract: Pb inclusions have been formed in Si [111] single crystals by ion implantation to doses of 10(15), 5 X 10(15) and 10(16) at./CM2. Combining Rutherford backscattering spectrometry (RBS), channeling and X-ray diffraction (XRD) results, we obtain information about the pressure in the inclusions, their epitaxy to the host lattice and the dependence of these properties on implantation dose and annealing temperature.
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Nuclear and Radiation Physics Section

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science