Materials science in semiconductor processing vol:4 issue:1-3 pages:149-151
The release of atomic H during charge injection into SiO2 layers thermally grown on silicon was monitored by measuring the H-induced decrease in the concentration of active boron accepters at the Si surface. It is found that H is set free both upon trapping of holes in the oxide and upon their neutralization by electron injection. The H+ release upon hole trapping correlates with the generation of paramagnetic E ' centers in the oxide (O-3=Si . defects) unveiling the hole trapping on Si-H bonds as the primary H liberation mechanism in SiO2. The additional H liberation upon neutralization of the positive charge created by hole injection suggests that a large portion of this charge is due to protons trapped in the oxide, which, upon electron trapping, are released as atomic H. (C) 2001 Elsevier Science Ltd. All rights reserved.