Title: Hydrogen release related to hole injection into SiO2 layers on Si
Authors: Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Feb-2001
Publisher: Elsevier sci ltd
Series Title: Materials science in semiconductor processing vol:4 issue:1-3 pages:149-151
Abstract: The release of atomic H during charge injection into SiO2 layers thermally grown on silicon was monitored by measuring the H-induced decrease in the concentration of active boron accepters at the Si surface. It is found that H is set free both upon trapping of holes in the oxide and upon their neutralization by electron injection. The H+ release upon hole trapping correlates with the generation of paramagnetic E ' centers in the oxide (O-3=Si . defects) unveiling the hole trapping on Si-H bonds as the primary H liberation mechanism in SiO2. The additional H liberation upon neutralization of the positive charge created by hole injection suggests that a large portion of this charge is due to protons trapped in the oxide, which, upon electron trapping, are released as atomic H. (C) 2001 Elsevier Science Ltd. All rights reserved.
ISSN: 1369-8001
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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