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Title: Texture analysis of indium films grown on GaAs(100) by molecular beam epitaxy
Authors: Keckes, J
Ortner, B
Nemeth, S
Grietens, B
Borghs, Gustaaf #
Issue Date: Oct-1997
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:71 issue:17 pages:2460-2462
Abstract: X-ray diffraction texture analysis is employed to study heteroepitaxial layers of indium grown on GaAs(100) surfaces by molecular beam epitaxy. The results document the epitaxial relationships In{101}parallel to GaAs{111} and In[100]parallel to GaAs[110]. Furthermore, an In{101} plane is oriented marry parallel to another GaAs{111} plane, with angular deviation less than 3.9 degrees. Due to the symmetry of the zincblende structure, for each GaAs(111) plane, In crystallites are detected in three equivalent positions. The growth of In layers was strongly influenced by the polar character of the GaAs structure, because indium was found to grow preferably on {111}A planes. (C) 1997 American Institute of Physics. [S0003-6951(97)02543-6].
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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