Title: Mesa release and deposition used for gaas-on-si mesfet fabrication
Authors: Deboeck, J
Zou, G
Van Rossum, Marc
Borghs, Gustaaf #
Issue Date: Jan-1991
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:27 issue:1 pages:22-23
Abstract: A report is made on the first devices processed using a novel mesa release and deposition (MRD) technique on heteroepitaxial GaAs-on-Si. Mesas are etched, released by under-etching and deposited selfaligned on their original positions. Standard MESFET processing is performed on the MRD structures, demonstrating the suitability of the technique for fabrication of monolithic optoelectronic GaAs devices on Si.
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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