|ITEM METADATA RECORD
|Title: ||AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction|
|Authors: ||Zanoni, Enrico|
|Issue Date: ||2013 |
|Publisher: ||Institute of Electrical and Electronics Engineers|
|Series Title: ||IEEE Transactions on Electron Devices vol:60 issue:10 pages:3119-3131|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Supporting Services Campusmanagement Science, Engineering and Technology|
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