Title: AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
Authors: Zanoni, Enrico
Meneghini, Matteo
Chini, Alessandro
Marcon, Denis
Meneghesso, Gaudenzio
Issue Date: 2013
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Electron Devices vol:60 issue:10 pages:3119-3131
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Supporting Services Campusmanagement Science, Engineering and Technology

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science