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Title: Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
Authors: Toledano Luque, Maria
Kaczer, Ben
Aoulaiche, Marc
Spessot, Alessio
Roussel, Philippe
Ritzenthaler, Romain
Schram, Tom
Thean, Aaron
Groeseneken, Guido
Issue Date: 2013
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:109 pages:314-317
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Supporting Services Campusmanagement Science, Engineering and Technology

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