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International Electron Devices Meeting - IEDM, Date: 2013/12/09 - 2013/12/11, Location: Washington, DC USA

Publication date: 2013-01-01
Pages: 542 - 545
ISSN: 9781479923076
Publisher: Institute of Electrical and Electronics Engineers

International Electron Devices Meeting - IEDM

Author:

Sasaki, Yuichiro
Godet, Ludovic ; Chiarella, Thomas ; Brunco, David ; Rockwell, Tyler ; Lee, Jae Woo ; Colombeau, Benjamin ; Togo, Mitsuhiro ; Chew, Soon Aik ; Zschaetzsch, Gerd ; Noh, Kyung Bong ; De Keersgieter, An ; Boccardi, Guillaume ; Kim, Min-Soo ; Hellings, Geert ; Martin, Patrick ; Vandervorst, Wilfried ; Thean, Aaron ; Horiguchi, Naoto

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics

Abstract:

We demonstrate a novel photoresist-compatible FinFET doping technique that combines the advantages of deposition and implantation. Energy and deposition thickness optimization for the Ion Assisted Deposition and Doping (IADD) process provides excellent doping of nMOS extensions, thus reducing external resistance R EXT . On current I ON is improved by 6-8% for L G of 26-30 nm and by 15% for L G of 20 nm, with better SCE and DIBL. © 2013 IEEE.