International Electron Devices Meeting - IEDM, Date: 2013/12/09 - 2013/12/11, Location: Washington, DC USA
Publication date:
2013-01-01
Pages:
542 -
545
ISSN:
9781479923076
Publisher:
Institute of Electrical and Electronics Engineers
International Electron Devices Meeting - IEDM
Author:
Sasaki, Yuichiro
Godet, Ludovic ; Chiarella, Thomas ; Brunco, David ; Rockwell, Tyler ; Lee, Jae Woo ; Colombeau, Benjamin ; Togo, Mitsuhiro ; Chew, Soon Aik ; Zschaetzsch, Gerd ; Noh, Kyung Bong ; De Keersgieter, An ; Boccardi, Guillaume ; Kim, Min-Soo ; Hellings, Geert ; Martin, Patrick ; Vandervorst, Wilfried ; Thean, Aaron ; Horiguchi, Naoto
Keywords:
Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics
Abstract:
We demonstrate a novel photoresist-compatible FinFET doping technique that combines the advantages of deposition and implantation. Energy and deposition thickness optimization for the Ion Assisted Deposition and Doping (IADD) process provides excellent doping of nMOS extensions, thus reducing external resistance R EXT . On current I ON is improved by 6-8% for L G of 26-30 nm and by 15% for L G of 20 nm, with better SCE and DIBL. © 2013 IEEE.