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Title: Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
Authors: Vaisman Chasin, Adrian ×
Simoen, Eddy
Nag, Manoj
Bhoolokam, Ajay
Genoe, Jan
Gielen, Georges
Heremans, Paul #
Issue Date: 27-Feb-2014
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:104 issue:8
Article number: 82112
Abstract: The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼1019 cm−3 eV−1 at the conduction band edge and a value of ∼1017 cm−3 eV−1 at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:externen TMMA
ESAT - MICAS, Microelectronics and Sensors
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Supporting Services Campusmanagement Science, Engineering and Technology
× corresponding author
# (joint) last author

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