|ITEM METADATA RECORD
|Title: ||Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates|
|Authors: ||Zhao, Ming|
Kandaswamy, Prem Kumar
|Issue Date: ||2014 |
|Host Document: ||Physica Status Solidi C vol:11 issue:3-4 pages:446-449|
|Conference: ||10th International Conference on Nitride Semiconductors (ICNS) edition:10 location:Washington, DC date:AUG 25-30, 2013|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Supporting Services Campusmanagement Science, Engineering and Technology|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.
© Web of science