Title: Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors
Authors: Kao, Kuo-Hsing ×
Verhulst, Anne
Rooyackers, Rita
Douhard, Bastien
Delmotte, Joris
Bender, Hugo
Richard, Olivier
Vandervorst, Wilfried
Simoen, Eddy
Hikavyy, Andriy
Loo, Roger
Arstila, Kai
Collaert, Nadine
Thean, Aaron
Heyns, Marc
De Meyer, Kristin #
Issue Date: 2014
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:116 issue:21 pages:1-11
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Surface and Interface Engineered Materials
Supporting Services Campusmanagement Science, Engineering and Technology
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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