|ITEM METADATA RECORD
|Title: ||Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region|
|Authors: ||Hu, Jie|
De Jaeger, Brice
|Issue Date: ||2014 |
|Series Title: ||Physica Status Solidi C vol:11 issue:3-4 pages:862-865|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Supporting Services Campusmanagement Science, Engineering and Technology|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.