Title: RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
Authors: Franco, Jacopo
Kaczer, Ben
Waldron, Niamh
Roussel, Philippe
Alian, AliReza
Pourghaderi, Mohammad Ali
Ji, Zhigang
Grasser, Tibor
Kauerauf, Thomas
Sioncke, Sonja
Collaert, Nadine
Thean, Aaron
Groeseneken, Guido
Issue Date: 2014
Host Document: International Electron Devices Meeting - IEDM pages:506-509
Conference: International Electron Devices Meeting - IEDM location:San Francisco, CA USA date:2014-12-15
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Supporting Services Campusmanagement Science, Engineering and Technology

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