Title: Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants
Authors: Chen, Yang Yin
Roelofs, Robin
Redolfi, Augusto
Degraeve, Robin
Crotti, Davide
Fantini, Andrea
Clima, Sergiu
Govoreanu, Bogdan
Komura, Masanori
Goux, Ludovic
Zhang, Leqi
Belmonte, Attilio
Xie, Qi
Maes, Jan
Pourtois, Geoffrey
Jurczak, Malgorzata
Issue Date: 2014
Host Document: IEEE Symposium on VLSI Technology pages:166-167
Conference: IEEE Symposium on VLSI Technology location:Honolulu, HI USA date:2014-06-09
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Supporting Services Campusmanagement Science, Engineering and Technology

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