Title: Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures
Authors: Afanas'ev, Valeri
Houssa, Michel
Stesmans, Andre
Issue Date: 2014
Publisher: Springer
Host Document: Bias Temperature Instability for Devices and Circuits pages:229-252
Article number: 9
Abstract: The chapter overviews charge properties of oxide and interface paramagnetic defects in semiconductor/oxide entities, primarily Si/SiO2, as revealed by correlative analysis of electron spin resonance data and electrical analysis. The role of dangling bond defects in electrical degradation phenomena induced by bias-temperature stress or irradiation is discussed. In particular, the importance of hydrogen/proton mediated interactions is underlined on the basis of the available experimental evidence.
ISBN: 978-1-4614-7908-6
Publication status: published
KU Leuven publication type: IHb
Appears in Collections:Semiconductor Physics Section

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