Title: Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy
Authors: Madia, Oreste ×
Segercrantz, N
Afanas'ev, Valeri
Stesmans, Andre
Souriau, L
Slotte, J
Tuomisto, F #
Issue Date: 2014
Publisher: Akademie-Verlag
Series Title: Physica Status Solidi B, Basic Research vol:251 issue:11 pages:2211-2215
ISSN: 0370-1972
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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