Title: On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
Authors: Goux, L ×
Raghavan, N
Fantini, Andrea
Nigon, R
Strangio, S
Degraeve, R
Kar, G
Chen, Yang Yin
De Stefano, Francesca
Afanas'ev, Valeri
Jurczak, M #
Issue Date: 2014
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:116 issue:13 pages:1345012-1-134502-10
Article number: 134502
Abstract: In this article, we investigate extensively the bipolar-switching properties of Al2O3-and HfO2-based resistive-switching memory cells operated at low current down to < 1 mu A. We show that the switching characteristics differ considerably from those typically reported for larger current range (> 15 mu A), which we relate as intrinsic to soft-breakdown (SBD) regime. We evidence a larger impact of the used switching-oxide in this current range, due to lower density of oxygen-vacancy (V-o) defects in the SBD regime. In this respect, deep resetting and large memory window may be achieved using the stoichiometric Al2O3 material due to efficient V-o annihilation, although no complete erasure of the conductive-filament (CF) is obtained. We finally emphasize that the conduction may be described by a quantum point-contact (QPC) model down to very low current level where only a few Vo defects compose the QPC constriction. The large switching variability inherent to this latter aspect is mitigated by CF shape tuning through adequate engineering of an Al2O3\HfO2 bilayer.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
ESAT - MICAS, Microelectronics and Sensors
Supporting Services Campusmanagement Science, Engineering and Technology
× corresponding author
# (joint) last author

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