Title: Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes
Authors: Moors, Kristof ×
Sorée, Bart
Tokei, Zsolt
Magnus, Wim #
Issue Date: Mar-2015
Host Document: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS pages:201-204
Conference: EUROSOI-ULIS location:Bologna date:January 26-28 2015
Abstract: We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi’s golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Theoretical Physics Section
ESAT- TELEMIC, Telecommunications and Microwaves
× corresponding author
# (joint) last author

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