|ITEM METADATA RECORD
|Title: ||Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation From 40 to 150 °C|
|Authors: ||Vantomme, André|
Wang, KL #
|Issue Date: ||Jan-1993 |
|Publisher: ||Materials Research Society|
|Host Document: ||MRS Internet Journal of Nitride Semiconductor Research vol:326 pages:121-126|
|Conference: ||Symposium on Growth, Processing, and Characterization of Semiconductor Heterostructures, at the 1993 Fall Meeting of the Materials-Research-Society location:Boston. MA date:29 November-2 December 1993|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Non-KU Leuven Association publications|
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