Title: Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation From 40 to 150 °C
Authors: Vantomme, André
Song, JH
Lie, DYE
Eisen, F
Nicolet, MA
Carns, TK
Wang, KL #
Issue Date: Jan-1993
Publisher: Materials Research Society
Host Document: MRS Internet Journal of Nitride Semiconductor Research vol:326 pages:121-126
Conference: Symposium on Growth, Processing, and Characterization of Semiconductor Heterostructures, at the 1993 Fall Meeting of the Materials-Research-Society location:Boston. MA date:29 November-2 December 1993
ISSN: 1092-5783
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Non-KU Leuven Association publications
# (joint) last author

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