Title: Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)
Authors: LIE, Dyc
Vantomme, André
Eisen, F
Nicole, MA
Arbetengels, V
Wang, KL #
Issue Date: Apr-1992
Publisher: Materials Research Society
Host Document: MRS Internet Journal of Nitride Semiconductor Research vol:262 pages:1079-1084
Conference: Symp on Defect Engineering in Semiconductor Growth, Processing and Device Technology, at the 1992 Spring Meeting of the Materials Research Soc location:San Francisco date:26 May 1992
ISBN: 1-55899-157-3
ISSN: 1092-5783
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Non-KU Leuven Association publications
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science