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Title: On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
Authors: Bakeroot, Benoit ×
You, Shuzhen
Wu, Tian-Li
Hu, Jie
Van Hove, Marleen
De Jaeger, Brice
Geens, Karen
Stoffels, Steve
Decoutere, Stefaan #
Issue Date: 7-Oct-2014
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:116 issue:134506 pages:1-10
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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