A 12 ghz oscillator based on a gaas hemt integrated to a hts resonator
Borghs, Gustaaf × Deboeck, J Francois, I Chambonnet, D Belouet, C Crosnier, Y Carru, Jc Chauvel, D Arnaud, L Boucher, H Villegier, Jc Nicoletti, S Correra, L Jimenez, J #
Journal de physique iv vol:4 issue:C6 pages:189-194
A hybrid oscillator operating at 12 GHz and 77 K was designed and characterised. The design incorporated on a single substrate a passive superconductive circuit and a III-V active device. YBaCuO films (300nm), grown on MgO, had a surface resistance at 77 K of 0.3 mOMEGA scaled to 12 GHz. The DC and RF characteristics of the pseudomorphic HEMT showed minor differences before and after hybridation. The characterisation of a preliminary prototype oscillator including a superconducting resonator patterned on a MgO substrate, a gold matching network fabricated on Al2O3 and a transistor wire bonded gave a phase noise as low as - 75 dBc/Hz at 10 KHz.