Title: Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
Authors: Ronchi, Nicolo
De Jaeger, Brice
Van Hove, Marleen
Roelofs, Robin
Wu, Tian-Li
Hu, Jie
Kang, Xuanwu
Decoutere, Stefaan
Issue Date: 12-Sep-2014
Conference: 2014 International Conference on Solid State Devices and Materials edition:46 location:Tsukuba, Japan date:8-11, 2014
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors

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